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| SM5S Series New Product Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7) 0.524(13.3) Stand-off Voltage 10 to 36V Peak Pulse Power 3600W (10/1000s) 2800W (10/10,000s) 0.116(3.0) 0.093(2.4) ted* aten P 0.413(10.5) 0.374(9.5) Mounting Pad Layout 0.091(2.3) 0.067(1.7) 0.116(3.0) 0.093(2.4) 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) Dimensions in inches and (millimeters) LEAD 1 0.138(3.5) 0.098(2.5) 0.366(9.3) 0.343(8.7) 0.606(15.4) 0.583(14.8) 0.150(3.8) 0.126(3.2) 0.197(5.0) 0.185(4.7) *Patent #'s: 0.028(0.7) 0.020(0.5) 0.098(2.5) 0.059(1.5) 0.016 (0.4) Min. 4,980,315 5,166,769 5,278,095 LEAD 2/METAL HEATSINK Features * Ideally suited for load dump protection * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature stability due to unique oxide passivation and patented PAR(R)construction * Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation * Low leakage current at TJ = 175C * High temperature soldering guaranteed: 260C for 10 seconds at terminals * Meets ISO7637-2 surge spec. * Low forward voltage drop Mechanical Data Case: Molded plastic body, surface mount with heatsink integrally mounted in the encapsulation Terminals: Plated, solderable per MIL-STD-750, Method 2026 Polarity: Heatsink is anode Mounting Position: Any Weight: 0.091 oz., 2.58 g Packaging codes/options: 2D/750 per 13" Reel (16mm Tape), anode towards sprocket hole, 4.5K/box 2E/750 per 13" Reel (16mm Tape), cathode towards sprocket hole, 4.5K/box Maximum Ratings and Thermal Characteristics (TC = 25C unless otherwise noted) Parameter Peak pulse power dissipation with 10/1000s waveform 10/10,000s waveform Steady state power dissipation Peak pulse current with a 10/1000s waveform (1) Symbol PPPM PD IPPM IFSM RJC TJ, TSTG Value 3600 2800 5.0 See Table 1 500 1.0 -55 to +175 Unit W W A A C/W C Peak forward surge current, 8.3ms single half sine-wave Typical thermal resistance junction to case Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse derated above TA = 25C Document Number 88382 06-May-02 www.vishay.com 1 SM5S Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25C unless otherwise noted) Device Type Breakdown Voltage V(BR) (V) Min. SM5S10 SM5S10A SM5S11 SM5S11A SM5S12 SM5S12A SM5S13 SM5S13A SM5S14 SM5S14A SM5S15 SM5S15A SM5S16 SM5S16A SM5S17 SM5S17A SM5S18 SM5S18A SM5S20 SM5S20A SM5S22 SM5S22A SM5S24 SM5S24A SM5S26 SM5S26A SM5S28 SM5S28A SM5S30 SM5S30A SM5S33 SM5S33A SM5S36 SM5S36A 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 Max. 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 Test Current IT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Stand-off Voltage VWM (V) 10.0 10.0 11.0 11.0 12.0 12.0 13.0 13.0 14.0 14.0 15.0 15.0 16.0 16.0 17.0 17.0 18.0 18.0 20.0 20.0 22.0 22.0 24.0 24.0 26.0 26.0 28.0 28.0 30.0 30.0 33.0 33.0 36.0 36.0 Maximum Reverse Leakage at VWM ID (A) 15 15 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Maximum Max. Peak Maximum Reverse Pulse Clamping Leakage Current Voltage at at VWM at 10/1000s IPPM Tc = 175oC Waveform VC ID(A) 250 250 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 (A) 191 212 179 198 164 181 151 167 140 155 134 148 125 138 118 130 112 123 101 111 91 101 84 93 77 86 72 79 67 74 61 68 56 62 (V) 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.1 45.4 53.5 48.4 59.0 53.3 64.3 58.1 Note: For all types maximum VF = 2.0V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 2 Document Number 88382 06-May-02 SM5S Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Power Derating Curve 8.0 3,000 Load Dump Power Characteristics (10ms Exponential Waveform) 2,500 Power Dissipation (W) 6.0 Load Dump Power (W) 2,000 1,500 1,000 4.0 2.0 500 0 0 50 100 150 200 0 25 50 75 100 125 150 175 Case Temperature (C) Case Temperature (C) Pulse Waveform 150 TA = 25C Pulse width (td) is defined as the point where the peak current decays to 50% of IPP 10,000 Reverse Power Capability Input Peak Pulse Current % tr = 10s 100 Peak Value IPP 50 Half Value - IPP 2 0 0 td 10 20 30 40 Reverse Surge Power (W) 1,000 10 100 Time, ms (t) Pulse Width (ms) - 1/2 IPP Exponential Waveform Typical Transient Thermal Impedance 100 Transient Thermal Impedance (C/W) RJA 10 1 RJC 0.1 0.01 0.01 0.1 1 10 100 t - Pulse Width (sec.) Document Number 88382 06-May-02 www.vishay.com 3 |
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